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| TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. The TSHF5200 emitter is suitable for serial infrared links according to the IrDA-standard. 94 8390 Features * * * * * * * * * * * High modulation bandwidth (10 MHz) High radiant power Low forward voltage Suitable for high pulse current operation Standard T-13/4 ( 5 mm) package Angle of half intensity = 10 Peak wavelength p = 870 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz). Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 160 100 - 40 to + 100 - 40 to + 100 260 270 Unit V mA mA A mW C C C C K/W Document Number 81023 Rev. 1.5, 08-Mar-05 www.vishay.com 1 TSHF5200 Vishay Semiconductors Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction capacitance Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tf 50 160 100 1000 35 - 0.7 10 870 40 0.2 30 30 3.7 400 Min Typ. 1.35 2.4 -1.7 10 Max 1.6 Unit V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm Typical Characteristics (Tamb = 25 C unless otherwise specified) 180 P - Power Dissipation ( mW) V IF - Forward Current ( mA) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient T emperature (C ) 16085 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient T emperature (C ) 16084 Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 81023 Rev. 1.5, 08-Mar-05 TSHF5200 Vishay Semiconductors 1000 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 Tamb < 50 0.05 0.1 I e - Radiant Intensity ( mW/sr ) 100 10 0.2 0.5 1 0.1 100 0.01 16031 100 0.1 1.0 10 100 94 8881 101 102 103 I F - Forward Current ( mA ) 104 tp - Pulse Duration ( ms ) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current 10 4 I F - Forward Current ( mA) e - Radiant Power ( mW ) 1000 10 3 100 10 2 10 10 1 1 10 0 0 94 8880 1 2 3 4 0.1 10 0 94 8007 V F - Forward Voltage ( V ) 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 Figure 4. Forward Current vs. Forward Voltage Figure 7. Radiant Power vs. Forward Current 1.2 V Frel - Relative Forward Voltage 1.6 1.1 I e rel / e rel 1.2 I F = 10 mA 1.0 0.9 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 8882 0 -10 0 10 50 100 140 94 7990 T amb - Ambient Temperature ( C ) Tamb - Ambient T emperature (C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature Document Number 81023 Rev. 1.5, 08-Mar-05 www.vishay.com 3 TSHF5200 Vishay Semiconductors 0 e, rel - Relative Radiant Power Ie rel - Relative Radiant Intensity 1.25 1.0 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.75 0.5 0.25 0 780 880 - Wavelength ( nm ) 980 15989 0.6 0.4 0.2 0 0.2 0.4 0.6 95 9886 Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions in mm 95 10916 www.vishay.com 4 Document Number 81023 Rev. 1.5, 08-Mar-05 TSHF5200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81023 Rev. 1.5, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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